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| FLM1414-4F Internally Matched Power GaAs FET FEATURES * * * * * * * High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: add = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1414-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 25 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 14.5GHz, f = 10MHz 2-Tone Test Pout = 25.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 14.0 ~ 14.5 GHz IDS = 0.65 IDSS(Typ.) ZS = ZL = 50 Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 1100mA VDS = 5V, IDS = 85mA IGS = -85A Min. -0.5 -5.0 35.5 5.0 -44 Limit Typ. Max. 1700 1700 -1.5 36.0 6.0 1100 27 -46 5.0 2600 -3.0 1300 0.6 6.0 80 Unit mA mS V V dBm dB mA % dB dBc C/W C G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.2 August 2004 1 FLM1414-4F Internally Matched Power GaAs FET POWER DERATING CURVE 30 OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 14.5 GHz f2 = 14.51 GHz 2-tone test Pout 24 Output Power (S.C.L.) (dBc) Total Power Dissipation (W) 31 29 27 25 23 21 18 -25 -35 -45 -55 12 IM3 6 0 50 100 150 200 16 18 20 22 24 Case Temperature (C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS = 10V P1dB OUTPUT POWER vs. INPUT POWER 38 Output Power (dBm) 37 36 36 34 VDS=10V f = 14.25 GHz 30 Pout Output Power (dBm) 35 34 33 32 31 30 14.0 14.1 14.2 Pin = 30dBm 28dBm 32 30 28 26 24 add 25 20 15 10 5 0 18 20 22 24 26 28 30 32 IM3 (dBc) add (%) 26dBm 24dBm Input Power (dBm) 14.3 14.4 14.5 Frequency (GHz) 2 FLM1414-4F Internally Matched Power GaAs FET +j50 +j100 +j25 13.8 GHz 14.7 +j10 14.0 14.7 14.2 14.0 +j250 14.5 14.5 14.5 250 0.1 14.7 0 14.2 14.2 13.8 GHz 14.5 14.5 14.0 14.4 10 25 14.5 13.8 GHz 14.2 14.7 14.7 14.4 SCALE FOR |S12| S11 S22 +90 0.2 S21 S12 180 1 2 3 4 14.4 14.4 14.2 SCALE FOR |S21| 13.8 GHz 14.0 13.8 GHz 0 -j10 13.8 GHz 14.0 -j250 14.2 14.0 -j25 -j50 -j100 -90 S-PARAMETERS VDS = 10V, IDS = 1100mA FREQUENCY S11 (MHZ) MAG ANG S21 MAG ANG MAG S12 ANG MAG S22 ANG 13800 13900 14000 14100 14200 14300 14400 14500 14600 14700 .479 .436 .388 .334 .278 .209 .162 .150 .194 .264 -159.9 -178.2 162.3 141.1 117.4 88.3 47.6 -8.2 -55.1 -89.3 1.883 1.921 1.955 1.990 2.017 2.032 2.050 2.016 1.966 1.882 -51.6 -70.6 -90.8 -110.4 -131.2 -151.9 -172.9 165.3 143.4 121.0 .080 .084 .093 .098 .100 .110 .113 .114 .116 .115 -54.0 -73.1 -94.2 -115.0 -135.6 -157.1 -177.9 160.0 138.4 117.5 .459 .454 .438 .430 .413 .381 .353 .307 .256 .216 156.7 134.3 112.7 92.1 68.9 48.0 24.8 0.4 -24.4 -55.4 3 FLM1414-4F Internally Matched Power GaAs FET Case Style "IA" Metal-Ceramic Hermetic Package 1.5 Min. (0.059) 1 2-R 1.250.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.80.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.70.15 (0.382) 13.00.15 (0.512) 16.50.15 (0.650) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 |
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